PDN2309 Datasheet | Potens semiconductor

Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3 Pin Configuration BVDSS -20V RDSON 33m ID -5.8A Features - -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for -1.8V Gate Drive Applications Applications - Notebook - Load Switch - Battery Protection - Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain...