PDN3911S Datasheet | Potens semiconductor

Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration BVDSS -30V RDSON 55m ID -4.1A Features - -30V,-4.1A, RDS(ON) =55mΩ@VGS = -10V - Fast switching - Green Device Available - Suit for -4.5V Gate Drive Applications - Ro HS pliant & Halogen Free Applications - Notebook - Load Switch - Battery Protection - Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TA=25℃) Drain Current - Continuous (TA=70℃)...