PDN3914S - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,5.5A, RDS(ON) =25mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDN3914S n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDN3914S
Manufacturer	Potens semiconductor
File Size	668.04 KB
Description	N-Channel MOSFETs
Datasheet	PDN3914S Datasheet

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30V N-Channel MOSFETs PDN3914S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D S G G D S BVDSS 30V RDSON 25m ID 5.5A Features  30V,5.