Datasheet4U Logo Datasheet4U.com

PDN3915S - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V,-3.3A, RDS(ON) =90mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

📥 Download Datasheet

Datasheet Details

Part number PDN3915S
Manufacturer Potens semiconductor
File Size 816.36 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDN3915S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PDN001 SCHOTTKY DIODE NETWORK California Micro Devices Corp
PDN001R SCHOTTKY DIODE NETWORK California Micro Devices Corp
PDN001T SCHOTTKY DIODE NETWORK California Micro Devices Corp
PDN002 17 CHANNEL ESD PROTECTION ARRAY California Micro Devices Corp
PDN002QR 17 CHANNEL ESD PROTECTION ARRAY California Micro Devices Corp

Other Datasheets by Potens semiconductor

Part Number Description
PDN3911S P-Channel MOSFETs
PDN3912S N-Channel MOSFETs
PDN3913S P-Channel MOSFETs
PDN3914S N-Channel MOSFETs
PDN3916S N-Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
30V P-Channel MOSFETs PDN3915S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -30V RDSON 90m ID -3.3A Features  -30V,-3.3A, RDS(ON) =90mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.