PDQ3714 - N+P Channel MOSFETs

Potens semiconductor

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

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PDQ3714 n+p channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDQ3714
Manufacturer	Potens semiconductor
File Size	677.23 KB
Description	N+P Channel MOSFETs
Datasheet	PDQ3714 Datasheet

Full PDF Text Transcription for PDQ3714 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDQ3714. For precise diagrams, and layout, please refer to the original PDF.

30V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced te...

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effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Dual Pin Configuration D2 S1 D1 D1 G1 G2 S2 G1 G2 S1 D2 2 S2 PDQ3714 BVDSS 30V -30V RDSON 30m 65m ID 4A -3A Features  Fast switching  Green Device Available  Suit for 4.

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