PDQ3912 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,6.5A, RDS(ON) =24mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDQ3912 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDQ3912
Manufacturer	Potens semiconductor
File Size	629.83 KB
Description	N-Channel MOSFETs
Datasheet	PDQ3912 Datasheet

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Full PDF Text Transcription for PDQ3912 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDQ3912. For precise diagrams, tables, and layout, please refer to the original PDF.

30V N-Channel MOSFETs PDQ3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technolo...

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t transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration DDS G D D G D S BVDSS 30V RDSON 24mΩ ID 6.5A Features  30V,6.