Datasheet4U Logo Datasheet4U.com

PDQ3907 - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V,-5.5A, RDS(ON) =23mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

📥 Download Datasheet

Datasheet Details

Part number PDQ3907
Manufacturer Potens semiconductor
File Size 949.12 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDQ3907 Datasheet

Full PDF Text Transcription for PDQ3907 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDQ3907. For precise diagrams, and layout, please refer to the original PDF.

Preliminary datasheet 30V P-Channel MOSFETs PDQ3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. ...

View more extracted text
mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration DS D G D BVDSS -30V RDSON 23m ID -5.5A Features  -30V,-5.5A, RDS(ON) =23mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.

More Datasheets from Potens semiconductor

Part Number Description
PDQ3909 P-Channel MOSFETs
PDQ3911 P-Channel MOSFETs
PDQ3912 N-Channel MOSFETs
PDQ3714 N+P Channel MOSFETs
PDQ02N15 N-Channel MOSFETs
PDQ0854-R Dual N-Channel MOSFETs
PDQ2116 N+P Channel MOSFETs
PDQ2215 Dual P-Channel MOSFETs
PDQ2218 Dual N-Channel MOSFETs
PDQ2307 P-Channel MOSFETs