PDQ3907 Datasheet | Potens semiconductor

Preliminary datasheet 30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Pin Configuration DS D BVDSS -30V RDSON 23m ID -5.5A Features - -30V,-5.5A, RDS(ON) =23mΩ@VGS = -10V - Fast switching - Green Device Available - Suit for -4.5V Gate Drive Applications Applications - MB / VGA / Vcore - POL...