PDR0906 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

100V,15A, RDS(ON) =90mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDR0906 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDR0906
Manufacturer	Potens semiconductor
File Size	485.86 KB
Description	N-Channel MOSFETs
Datasheet	PDR0906 Datasheet

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Full PDF Text Transcription for PDR0906 (Reference)

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has ...

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istors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.