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PDR0978 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,70A, RDS(ON) =7.8mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDR0978

Datasheet Details

Part number PDR0978
Manufacturer Potens semiconductor
File Size 804.11 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDR0978 Datasheet
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Full PDF Text Transcription

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100V N-Channel MOSFETs PDR0978 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO251 Pin Configuration D D GDS G S BVDSS 100V RDSON 7.8m ID 70A Features  100V,70A, RDS(ON) =7.
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