PDR0978 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

100V,70A, RDS(ON) =7.8mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDR0978 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDR0978
Manufacturer	Potens semiconductor
File Size	804.11 KB
Description	N-Channel MOSFETs
Datasheet	PDR0978 Datasheet

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Full PDF Text Transcription for PDR0978 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDR0978. For precise diagrams, tables, and layout, please refer to the original PDF.

100V N-Channel MOSFETs PDR0978 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technol...

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ct transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO251 Pin Configuration D D GDS G S BVDSS 100V RDSON 7.8m ID 70A Features  100V,70A, RDS(ON) =7.