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PDS3911 - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-5.5A, RDS(ON) =50mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDS3911

Datasheet Details

Part number PDS3911
Manufacturer Potens semiconductor
File Size 664.72 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS3911 Datasheet
Additional preview pages of the PDS3911 datasheet.

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Full PDF Text Transcription

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30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS -30V RDSON 50m ID -5.5A Features  -30V,-5.5A, RDS(ON) =50mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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