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PDS3959 - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-24A, RDS(ON) =4.8mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDS3959
Manufacturer Potens semiconductor
File Size 468.03 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS3959 Datasheet

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Full PDF Text Transcription

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration DDD D S S SG G D S PDS3959 BVDSS -30V RDSON 4.8m ID -24A Features  -30V,-24A, RDS(ON) =4.8mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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