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PDS4903 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -40V,-10A, RDS(ON) =15mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – PDS4903

Datasheet Details

Part number PDS4903
Manufacturer Potens semiconductor
File Size 434.20 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS4903 Datasheet
Additional preview pages of the PDS4903 datasheet.

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Full PDF Text Transcription

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40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S PDS4903 BVDSS -40V RDSON 15m ID -10A Features  -40V,-10A, RDS(ON) =15mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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