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PDS4909 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -40V,-6.5A, RDS(ON) =45mΩ@VGS = -10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – PDS4909

Datasheet Details

Part number PDS4909
Manufacturer Potens semiconductor
File Size 684.88 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS4909 Datasheet
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Full PDF Text Transcription

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40V P-Channel MOSFETs PDS4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration DDDD G SS S G D S BVDSS -40V RDSON 45m ID -6.5A Features  -40V,-6.
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