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PDS4910 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – PDS4910

Datasheet Details

Part number PDS4910
Manufacturer Potens semiconductor
File Size 768.68 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDS4910 Datasheet
Additional preview pages of the PDS4910 datasheet.

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Full PDF Text Transcription

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40V N-Channel MOSFETs PDS4910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G S SS G D S BVDSS 40V RDSON 19m ID 6.7A Features  40V, 6.
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