PDS6701 - N+P Channel MOSFETs

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

Potens semiconductor

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Datasheet Details

Part number	PDS6701
Manufacturer	Potens semiconductor
File Size	919.31 KB
Description	N+P Channel MOSFETs
Datasheet	PDS6701 Datasheet
Additional preview pages of the PDS6701 datasheet.

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Full PDF Text Transcription

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60V N+P Dual Channel MOSFETs PDS6701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP-8L Pin Configuration D2D2 D1 D1 D1 D2 G2 G1 S2 G1 S1 G2 S1 S2 BVDSS 60V -60V RDSON 30m 48m ID 5.9A -4.7A Features  Fast switching  Green Device Available  Suit for 4.

Published: Aug 18, 2018 |