Potens semiconductor PDS6701
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDS6701 |
|---|---|
| Datasheet | PDS6701 Download |
| Manufacturer |  Potens semiconductor |
| Description | N+P Channel MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. SOP-8L Pin Configuration D2D2 D1 D1 D1 D2 G2 G1 S2 G1 S1 G2 S1 S2 BVDSS 60V -60V RDSON 30m 48m ID 5.9A -4.7AFEATURES
● Fast switching● Green Device Available
● Suit for 4.5V Gate Drive
APPLICATIONS
APPLICATIONS
● DC Fan● Motor Drive
APPLICATIONS
● Networking● Half / Full Bridge Topology
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drai
