Datasheet Summary
60V N+P Dual Channel MOSFETs
General Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP-8L Pin Configuration
D2D2 D1 D1
D1
D2
G2 G1 S2 G1 S1
G2 S1
S2
BVDSS 60V -60V
RDSON 30m 48m
ID 5.9A -4.7A
Features
- Fast switching
- Green Device Available
- Suit for 4.5V Gate Drive Applications
Applications
- DC Fan
- Motor Drive...