Datasheet Summary
60V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Dual Pin Configuration
D2 D1 D2 D1
D1 G1
S1G1S2 G2
S1
G2
D2 S2
BVDSS 60V
RDSON 54m
ID 4.5A
Features
- 60V, 4.5A, RDS(ON) =54mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- Motor...