PDS6810 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

60V, 4.5A, RDS(ON) =54mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDS6810
Manufacturer	Potens semiconductor
File Size	466.16 KB
Description	N-Channel MOSFETs
Datasheet	PDS6810 Datasheet
Additional preview pages of the PDS6810 datasheet.

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Full PDF Text Transcription

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60V N-Channel MOSFETs PDS6810 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Dual Pin Configuration D2 D1 D2 D1 D1 G1 S1G1S2 G2 S1 G2 D2 S2 BVDSS 60V RDSON 54m ID 4.5A Features  60V, 4.

Published: Aug 18, 2018 |