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PDS6903 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-8.5A, RDS(ON) =30mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDS6903
Manufacturer Potens semiconductor
File Size 666.77 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS6903 Datasheet
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60V P-Channel MOSFETs PDS6903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS -60V RDSON 30m ID -8.5A Features  -60V,-8.5A, RDS(ON) =30mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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