Potens semiconductor PDS6908
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDS6908 |
|---|---|
| Datasheet | PDS6908 Download |
| Manufacturer |  Potens semiconductor |
| Description | 60V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. SOP8 Pin Configuration D D DD D G S SSG S BVDSS 60V RDSON 26m ID 5.5AFEATURES
● 60V,5.5A, RDS(ON)=26mΩ@VGS=10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TA=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 60 ±20 5.5 4.4 22 26.5 23 1.47 0.011 -50 to 150 -50 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. --- Max.
