PDS6910 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

60V,5.5A, RDS(ON) =50mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

📥 Download Datasheet

Datasheet Details

Part number	PDS6910
Manufacturer	Potens semiconductor
File Size	603.82 KB
Description	N-Channel MOSFETs
Datasheet	PDS6910 Datasheet
Additional preview pages of the PDS6910 datasheet.

📁 Similar Datasheet

PDS-721 - Programmable Device Servers (ICP DAS)
PDS1-D - DC-DC CONVERTER (CUI)
PDS1-M - DC-DC CONVERTER (CUI)
PDS1-S - DC-DC CONVERTER (CUI)
PDS1-S12-D12-M - DC-DC CONVERTER (CUI)
PDS1-S12-D15-M - DC-DC CONVERTER (CUI)
PDS1-S12-D24-M - DC-DC CONVERTER (CUI)
PDS1-S12-D5-M - DC-DC CONVERTER (CUI)
PDS1-S12-D9-M - DC-DC CONVERTER (CUI)
PDS1-S12-S12-D - DC-DC CONVERTER (CUI)

Other Datasheets by Potens semiconductor

PDS6903 - P-Channel MOSFETs
PDS6904 - N-Channel MOSFETs
PDS6904-5 - N-Channel MOSFETs
PDS6906 - N-Channel MOSFETs
PDS6907 - P-Channel MOSFETs
PDS6960 - N-Channel MOSFETs
PDS6964 - N-Channel MOSFETs
PDS6966A - N-Channel MOSFETs

Full PDF Text Transcription

Click to expand full text

60V N-Channel MOSFETs PDS6910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D D D D SSS G G D S BVDSS 60V RDSON 50m ID 5.5A Features  60V,5.

Published: Aug 18, 2018 |