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PDS6976-5 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 65V,33A, RDS(ON) =4.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDS6976-5
Manufacturer Potens semiconductor
File Size 731.46 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDS6976-5 Datasheet

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Full PDF Text Transcription

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65V N-Channel MOSFETs PDS6976-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration DD DD SS S G G D S BVDSS 65V RDSON 4.5m ID 33A Features  65V,33A, RDS(ON) =4.
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