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BULD25DR - NPN Transistor

Description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s).

This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode.

Features

  • 3 Places 0,50 (0.020) x 45°NOM 0,25 (0.010) 5,21 (0.2.

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Datasheet preview – BULD25DR

Datasheet Details

Part number BULD25DR
Manufacturer Power Innovations Limited
File Size 277.67 KB
Description NPN Transistor
Datasheet download datasheet BULD25DR Datasheet
Additional preview pages of the BULD25DR datasheet.

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Other Datasheets by Power Innovations Limited

Full PDF Text Transcription

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BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D PACKAGE (TOP VIEW) 1 2 3 4 8 7 6 5 q C C C C q q q q NC - No internal connection SL PACKAGE (TOP VIEW) 1 2 3 q q Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability Custom Switching Selections Available Surface Mount and Through-Hole Options PACKAGE Small-outline Small-
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