BULD25DR Datasheet | Power Innovations Limited

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode. This device is available in the now well established 8 pin low height surface mount D package, and the TO220 pin patible SL package. Use of the SL package allows for a 40% height saving, making it ideal for pact ballast applications. absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage SYMBOL VCES VCBO VCEO V EBO VALUE 600 600 400 9 UNIT V V V V PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued) RATING Continuous collector current (see Note 1) Peak collector current (see Note 2) Continuous base current (see Note 1) Peak base current (see Note 2) Continuous device dissipation at (or below) 25°C ambient temperature BULD25D BULD25SL SYMBOL IC ICM IB IBM Ptot IE(av) Tj Tstg VALUE 2 4 1.5 2.5 see Figure 10 see Figure...