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PDM6ET20V08E - P- & N-Channel 20V MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PDM6ET20V08E
Manufacturer Prisemi
File Size 239.40 KB
Description P- & N-Channel 20V MOSFET
Datasheet download datasheet PDM6ET20V08E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel and P-Channel,20V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(Ω) N-Channel 20 0.2@ VGS=4.5V 0.25@ VGS=2.5V 0.31@ VGS=1.8V P-Channel -20 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V 0.86@ VGS=-1.8V ID(A) 0.8 -0.