PDM6ET20V08E
PDM6ET20V08E is P- & N-Channel 20V MOSFET manufactured by Prisemi.
N-Channel and P-Channel,20V,Small signal MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
MOSFET Product Summary
VDS(V)
RDS(on)(Ω)
N-Channel 20
0.2@ VGS=4.5V 0.25@ VGS=2.5V 0.31@ VGS=1.8V
P-Channel -20
0.45@ VGS=-4.5V 0.62@ VGS=-2.5V 0.86@ VGS=-1.8V
ID(A) 0.8
-0.8
D1 G2 S2
S1 G1 D2
Thermal resistance ratings
Parameter
Thermal Resistance-Junction to Ambient,Note:a Thermal Resistance-Junction to Ambient,Note:b Thermal Resistance-Junction to Case
Symbol
RθJA RθJA RθJC
Typical
340 465 280
Maximum
430 555 320
Units
℃/W ℃/W...
