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PDM6T20V3 - N- & P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PDM6T20V3
Manufacturer Prisemi
File Size 238.64 KB
Description N- & P-Channel MOSFET
Datasheet download datasheet PDM6T20V3 Datasheet

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PDM6T20V3 N-Channel and P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(Ω) N-Channel 20 0.043@ VGS=4.5V P-Channel -20 0.08@ VGS=-4.5V ID(A) 3 -2.8 N-Channel Pin configuration (Top view) Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation Operating Junction Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A t≤10s Symbol VDS VGS ID ID PD TJ Symbol θJA Value 20 ±8 3 9 1.25 -55 to 150 Typ Max - 100 Units V V A A W ℃ Units ℃/W Rev.06.3 1 www.prisemi.