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PDM6UT20V08E - N- & P-Channel 20V MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PDM6UT20V08E
Manufacturer Prisemi
File Size 218.64 KB
Description N- & P-Channel 20V MOSFET
Datasheet download datasheet PDM6UT20V08E Datasheet

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PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary VDS(V) RDS(on)(Ω) N-Channel 20 0.3@ VGS=4.0V 0.45@ VGS=2.5V 0.6@ VGS=1.8V P-Channel -20 0.9@ VGS=-4.5V 1.2@ VGS=-2.5V 1.5@ VGS=-1.8V ID(A) 0.6 -0.8 N-Channel D1 G2 S2 6 5 4 1 2 3 S1 G1 D2 Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25℃ Total Power Dissipation TA=125℃ Symbol VDS VGS ID ID PD PD Value 20 ±8 0.6 3.0 170 155 Units V V A A mW mW Rev.06.2 1 www.prisemi.