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PPM6N20V5 - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPM6N20V5
Manufacturer Prisemi
File Size 412.20 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM6N20V5 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPM6N20V5 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 52 @ VGS=-4.5V -5 （D） 1 （D） 2 （G） 3 6 （D） 5 （D） 4 （S） Internal structure （D） （D） （G） 12 3 DS 65 4 （D） （D） （S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current TA=25℃ TA=70℃ Drain Current Pulsed(Note1) Maximum Power Dissipation TA=25℃ Operating and Storage Junction Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Value -20 ±12 -5 -3 -20 2.4 -55 to +150 Units V V A A W ℃ Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient (Note 2) Symbol RθJA Max. 52 Units ℃/W Rev.06.1 1 www.prisemi.