PPM6N20V5 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. 52 Units ℃/W Rev.06.1 1 .prisemi. 1.Repetitive Rating:Pulse width limited by maximum junction temperature.
Datasheet Details
| Part number | PPM6N20V5 |
|---|---|
| Datasheet | PPM6N20V5-Prisemi.pdf |
| File Size | 412.20 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
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