| Part number | PPM6N30V4 |
|---|---|
| Datasheet | PPM6N30V4-Prisemi.pdf |
| File Size | 267.30 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
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The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current PD Power (W) ID Drain Current (A) Rev.06.2 2 .prisemi. Transfer Characteristics Ciss Coss Crss 10 0 3 20 40 60 100 120 140 Vds Drain-Source Voltage (V) Fig.8 Capacitance vs Vds .prisemi.
| Part Number | Description |
|---|---|
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