PPM6N30V4 Description
The enhancement mode MOS is extremely high density cell and low on-resistance. Drain Current PD Power (W) ID Drain Current (A) Rev.06.2 2 .prisemi. Transfer Characteristics Ciss Coss Crss 10 0 3 20 40 60 100 120 140 Vds Drain-Source Voltage (V) Fig.8 Capacitance vs Vds .prisemi.