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PPM6N30V4 - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPM6N30V4
Manufacturer Prisemi
File Size 267.30 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM6N30V4 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N30V4 P-Channel MOSFET VDS(V) -30 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.053 @ VGS=-10V -4.2 0.065@ VGS=-4.5V Internal structure （D） 1 （D） 2 （G） 3 6 （D） 5 （D） 4 （S） Bottom View （D） （D） （G） 1 2 3 D S 6 5 4 （D） （D） （S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Thermal resistance,Note1 Operating Junction and Storage Temperature Range Note1: FR4 Board using 1 square inch pad size, 1oz copper Symbol VDS VGS ID ID PD RθJA TJ,TSTG Value -30 ±12 -4.2 -30 2.4 52 -55 To 150 Units V V A A W ℃/W ℃ Rev.06.2 1 www.prisemi.