PPM6N30V9 Overview
The enhancement mode MOS is extremely high density cell and low on-resistance. 52 145 6.9 Units ℃/W Rev.06.5 1 .prisemi. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper Note2:.
Datasheet Details
| Part number | PPM6N30V9 |
|---|---|
| Datasheet | PPM6N30V9-Prisemi.pdf |
| File Size | 280.46 KB |
| Manufacturer | Prisemi |
| Description | P-Channel MOSFET |
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