PPM6N30V9 - P-Channel MOSFET

Datasheet Summary

Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

Prisemi

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Datasheet Details

Part number	PPM6N30V9
Manufacturer	Prisemi
File Size	280.46 KB
Description	P-Channel MOSFET
Datasheet	PPM6N30V9 Datasheet
Additional preview pages of the PPM6N30V9 datasheet.

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N30V9 P-Channel MOSFET VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 21 @ VGS=-4.5V -9 Internal structure （D） 1 （D） 2 （G） 3 6 （D） 5 （D） 4 （S） Bottom View （D）（D）（G） 1 2 3 D S 6 5 4 （D）（D）（S） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TA=25℃ TA=70℃ TA=25℃ Total Power Dissipation TA=125℃ Operating and Storage Junction Temperature Range Symbol VDS VGS ID ID PD PD TJ,TSTG Marking Value -30 ±12 -9 -36 2.4 0.

Published: Jul 17, 2025 |