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PPM6N30V8 - P-Channel MOSFET

General Description

The PPM6N30V8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and current handing capabil

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Datasheet Details

Part number PPM6N30V8
Manufacturer Prisemi
File Size 403.72 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM6N30V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The PPM6N30V8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MOSFET Product Summary VDS(V) -30 RDS(on)(mΩ)(Typ) 27 @ VGS=-10V ID(A) -8 Feature  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Applications  PWM applications  Load switch  Power management Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Total Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Rating Thermal Resistance, Junction to Ambient1） Thermal Resistance, Junction to Ambient2） Thermal Resistance, Junction to Case Rev.06.