PPM6N30V8 - P-Channel MOSFET

Datasheet Summary

Description

The PPM6N30V8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and current handing capabil

Prisemi

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Datasheet Details

Part number	PPM6N30V8
Manufacturer	Prisemi
File Size	403.72 KB
Description	P-Channel MOSFET
Datasheet	PPM6N30V8 Datasheet
Additional preview pages of the PPM6N30V8 datasheet.

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Full PDF Text Transcription

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Description The PPM6N30V8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MOSFET Product Summary VDS(V) -30 RDS(on)(mΩ)(Typ) 27 @ VGS=-10V ID(A) -8 Feature  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Applications  PWM applications  Load switch  Power management Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Total Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Rating Thermal Resistance, Junction to Ambient1） Thermal Resistance, Junction to Ambient2） Thermal Resistance, Junction to Case Rev.06.

Published: Jul 17, 2025 |