QL65J7S-A
QL65J7S-A is LASER DIODE manufactured by QSI.
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65J7S-A/B/C
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser.
QL65J7S-A/B/C
In Ga Al P Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver 0 JAN. 2007
- OVERVIEW
QL65J7S-A/B/C is a MOCVD grown 650nm band In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 50m W for optoelectronic devices such as DVD R/RW
- APPLICATION
- DVD R/RW
- Optical Module
- Features
- Visible Light Output : λp = 660 nm(typ.)
- Optical Power Output : 50m W CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
- ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL65J7SA
Fig. 2 QL65J7SB
Fig. 3 QL65J7SC
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