| Part number | HYI25D512160C |
|---|---|
| Datasheet | HYI25D512160C_Qimonda.pdf |
| File Size | 1.85 MB |
| Manufacturer | Qimonda |
| Description | 512-Mbit Double-Data-Rate SDRAM |
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Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active mand, which is then followed by a Read or Write mand.
| Part Number | Description |
|---|---|
| HYI25D256160C | 256-Mbit Double-Data-Rate SDRAM |
| HYI25D256800C | 256-Mbit Double-Data-Rate SDRAM |
| HYI18T1G160B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T1G167B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T1G400B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T1G800B | 1-Gbit Double-Data-Rate-Two SDRAM |
| HYI18T256160B | 256-Mbit Double-Data-Rate-Two SDRAM |
| HYI18T256400B | 256-Mbit Double-Data-Rate-Two SDRAM |
| HYI18T256800B | 256-Mbit Double-Data-Rate-Two SDRAM |
| HYI18TC256160AF | 256-Mbit Double-Data-Rate-Two SDRAM |
