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QPA1315 Datasheet 35 Watt GaN Power Amplifier

Manufacturer: Qorvo

Overview: QPA1315 15.4 – 17.7 GHz 35 Watt GaN Power Amplifier Product Overview Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1315 is targeted for 15.4 – 17.7 GHz band. It provides 35 W of saturated output power with 21 dB of large signal gain while achieving 20% power-added efficiency. The QPA1315 is packaged in a 10-lead 15 x 15 mm boltdown with a Cu base for superior thermal management. To simplify system integration, the QPA1315 is fully matched to 50 ohms with DC grounded I/O ports for optimum ESD performance. Also, there are on-chip blocking capacitors following the DC grounds on the input and output ports. The QPA1315 is ideal for supporting radar applications in both commercial and military markets. The QPA1315 is 100% DC and RF tested to ensure compliance to electrical specifications.

General Description

15.4 - 17.7 GHz 35 Watt GaN PA Evaluation Board Data Sheet Rev.

B, February 2024 | Subject to change without notice 1 of 30 © 2024 Qorvo US, Inc.

All rights reserved.

Key Features

  • Frequency Range: 15.4.
  • 17.7 GHz.
  • PSAT (PIN = 24 dBm): 45.5 dBm.
  • PAE (PIN = 24 dBm): 20 %.
  • Power Gain (PIN = 24 dBm): 21 dB.
  • Small Signal Gain: 25 dB.
  • Bias: Pulsed VD = 26 V, IDQ = 640 mA, VG = -2.5 V typ. Range, PW = 100 uS, DC = 10%.
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management. Performance is typical across frequency. Please reference electrical specifica.

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