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UJ4SC075018B7S - SiC FET

General Description

The UJ4SC075018B7S is a 750V, 18mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • 1 7 Part Number UJ4SC075018B7S G (1) KS (2) Package D2PAK-7L S (3-7) Marking UJ4SC075018B7S w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 125nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w D2PAK-7L package for faster switching, clean gate waveforms Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UJ4SC075018B7S D (Tab) 750V-18mW SiC FET Rev. A, January 2022 Description The UJ4SC075018B7S is a 750V, 18mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.