Overview: DlCIBLJI]
Solid State Division FileNo. 410
Power Transistors
2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings.
Featuring high breakdown voltage ratings and low-saturation voltage values, the 2NS838, 2N5839 and 2N5840 are especially suitable for use in inverteIS, deflection circuits, switching regulators, high-voltage bridge amplifiers, ignition circuits, and other high-voltage switching applications.
** Formerly RCA Dev. types TA7513f TA7530, and TA7420 respectively. MAXIMUM RATINGS, Absolute·MoKlmum Volues: 2N5838 2N5839 2N5840 *COLLECTOR-TO-SASE VOLTAGE, VCSO .••..•.. 275 300 375 V COLLECTOR'TQ-EMITTER SUSTAINING VOLTAGE: * :f~~ ~:::r::hl~:~~)~f) 250 275 350 V -1.5 V, VCE.V(sus)" ••••• 275 300 375 V n, With external base-to-emitter resistance (RSE)'::: 50 VCE.R(sus) .••.....•.. 275 300 375 V *EMITTER-TO-BASE VOLTAGE,VESO •...••.. 6 6 *COLLECTOR CURRENT, 1c 6 V Continuous • • . • . . • . . • . . Peak •.••••••••••..•. 3 A 5 A *CONTINUOUS SASE CURRENT, IS" •. .• • . . •• •• . •• ••• 1.5 1.5 1.5 A *TRANSISTOR DISSIPATION,
PT: At case temperature up to 25° c A~~~!CFe:~!~t:!~UPto2SoC 100 100 100 w Bnd VeE above 40 V ••••• See Fig. 2. At case temperatures above 25° C Bnd VCE above 40 V .•.•. See Figs. 1 & 2. *TEMPERATURE RANGE:
*p~~or;:~~~;g~({~;~~n) ·65 to -+200 Soldering): At distances ~ 1/32 in. (0.8 mm) from case for 10 s max ••••••••••• , •••• 230 : In accordance wlthJEDEC regIstration data format US-6. RDF-l). Shown as VCEX(BUS) in JEDEe Registration Data. SILICON N-P-N POWER TRANSISTORS High·Yoltage High·Power Types ~. '~ .-: ~ .
