2N5838 Datasheet and Specifications PDF

The 2N5838 is a HIGH-VOLTAGE/ HIGH-POWER SILICON N-P-N POWER TRANSISTORS.

Key Specifications

Mount TypeThrough Hole
Part Number2N5838 Datasheet
ManufacturerMotorola Semiconductor
Overview . .
Part Number2N5838 Datasheet
DescriptionBipolar NPN Device
ManufacturerSeme LAB
Overview 2N5838 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. hout notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@seme.
Part Number2N5838 Datasheet
DescriptionPower Transistors
ManufacturerRCA
Overview DlCIBLJI] Solid State Division FileNo. 410 Power Transistors 2N5838 2N5839 2N5840 RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site struc.
* Maximum safe-area-of-operation curves
* Low saturation voltages
* High voltage ratings VeER(s.s) = 375 V (2N5840) 300 V (2N5839) 275 V (2N5838)
* High dissipation rating PT = 100W !< z ~S! ~" ~ (IlCZ:~ a~~ ~~ ~~ t~il ." . ."~. .00ou.!::",zu""., S ~~ ~ ~B NOTE: CURRENT DERATING AT C.
Part Number2N5838 Datasheet
Description(2N5838 - 2N5840) Silicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Coll. TICS Tj=25 unless otherwise specified PARAMETER 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 2N5840 VCEsat VBEsat ICBO ICEV IEBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5838 hFE.

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