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RCR1525SI - P-Channel Enhancement Mode Field Effect Transistor

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RCR

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RCR1525SI P-Channel Enhancement Mode Field Effect Transistor by RCR - Datasheet Preview — Datasheet preview – RCR1525SI

Datasheet Details

Part number	RCR1525SI
Manufacturer	RCR
File Size	85.96 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	RCR1525SI Datasheet
Additional preview pages of the RCR1525SI datasheet.

Product details

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Features

VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON). z General.

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Published: May 1, 2016 |