Part RCR1526SQ
Description P-Channel Enhancement Mode Field Effect Transistor
Category Transistor
Manufacturer RCR
Size 99.06 KB
RCR

RCR1526SQ Overview

Key Features

  • Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm YKKJPD-V3.1 1/4 RCR1526SQ
  • Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note
  • Continuous TA=25°C Pulsed (Note
  • Total Power Dissipation (Note
  • Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Limit -30 ±20 -5.2 -50 1.5
  • 55 to +150 Unit V V A A W °C
  • ±1.5 ±100 nA
  • 1 -1.46 -3 V
  • 550 --- 60 --- 50 -- pF Turn–On Delay Time Turn–Off Delay