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RCR1526SQ - P-Channel Enhancement Mode Field Effect Transistor

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RCR

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RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor by RCR - Datasheet Preview — Datasheet preview – RCR1526SQ

Datasheet Details

Part number	RCR1526SQ
Manufacturer	RCR
File Size	99.06 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	RCR1526SQ Datasheet
Additional preview pages of the RCR1526SQ datasheet.

Product details

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Features

VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON). very small outline surface mount package. z Pin Configuration DDD D z General.

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Published: Jul 22, 2015 |