• Part: RCR1526SQ
  • Manufacturer: RCR
  • Size: 99.06 KB
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RCR1526SQ Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.