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RCR1526SQ - P-Channel Enhancement Mode Field Effect Transistor

General Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Key Features

  • VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON). very small outline surface mount package. z Pin Configuration DDD D z General.

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Datasheet Details

Part number RCR1526SQ
Manufacturer RCR
File Size 99.06 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet RCR1526SQ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor z Features VDS(V) = -30V, ID = -5.2A, RDS(ON) = 51mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High density cell design for low RDS(ON). very small outline surface mount package. z Pin Configuration DDD D z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a SSSG z Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm YKKJPD-V3.