RF Micro Devices RF2172
The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm QFN.| Part No. | RF2172 |
|---|---|
| Datasheet | RF2172 Download |
| Manufacturer |  RF Micro Devices |
| Description | ISM BAND 3.6V/ 250MW AMP WITH ANALOG GAIN CONTROL |
| Buy | Stock & Price |
APPLICATIONS
● BluetoothTM PA● 2.4GHz to 2.5GHz ISM Band Systems
● 902MHz to 928MHz ISM Band Systems Product
DESCRIPTION
The device is packaged in a compact 4mmx4mm QFN. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port. BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed to RF Micro Devices, Inc. 0.10 C B -B- ISM BAND 3.6V, 250mW AMP WITH ANALOG GAIN CONTROL● 3.6V Spread-Spectrum Cordless Phones
● Portable Battery-Powered Equipment
● Spread-Spectrum Systems 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 16-Pin, 4x4 GaAs HBT SiGe HBT GaN HEMT GaA...
