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RF2175 Datasheet PDF

RF Micro Devices RF2175

The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in TETRA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 380MHz to 512MHz band. The RF2175 has an analog bias control voltage to maximize efficiency.
Part No. RF2175
Datasheet RF2175 Download
Manufacturer
RF Micro Devices
Description 3V 400MHZ LINEAR AMPLIFIER
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RF2175 datasheet page 1 preview

APPLICATIONS

● 3V TETRA Cellular Handsets
● 3V CDMA Cellular Handsets
● Portable Battery-Powered Equipment 3V 400MHz LINEAR AMPLIFIER Product

DESCRIPTION

The device is self-contained with 50 Ω input, and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a small SSOP-16 plastic with backside ground. -A0.154 0.012 0.008 0.004 0.002 Note 3 EXPOSED HEATSINK Exposed Heat Sink 0.196 0.189 0.025 0.123 0.107 0.237 0.063 0.057 0.087 0.071 8° MAX 0° MIN NOTES: 1. Shaded lead in Pin 1. 2. Lead coplanarity - 0.003 with respect to datum "A". 3. Lead standoff is specified from the lowest point on the package underside. 0.035 0.016 0.010 0.007 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: SSOP-16 Slug GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS

FEATURES

● Single 3V Supply
● 31.8dBm Linear Output Power
● 37.5dB Linear Gain
● 30% Linear Efficiency
● On-Board Power Down Mode
● 380MHz to...
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