RF Micro Devices RF2173
The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics.| Part No. | RF2173 |
|---|---|
| Datasheet | RF2173 Download |
| Manufacturer |  RF Micro Devices |
| Description | 3V GSM POWER AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● 3V GSM Cellular Handsets● 3V Dual-Band/Triple-Band Handsets
● GPRS Compatible Product
DESCRIPTION
On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The RF2173 can be used together with the RF2174 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 0.10 C B -B- 3V GSM POWER AMPLIFIER● Commercial and Consumer Systems
● Portable Battery-Powered Equipment 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 9 Package Style: QFN, 16-Pin, 4x4 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
FEATURES
● Single 2.7V to 4.8V Supply...
