RF2637 Datasheet | RF Micro Devices

Description The RF2637 is a plete AGC amplifier designed for the receive section of 3V cellular and PCS applications basestations. It is designed to amplify IF signals while providing more than 90d B of gain control range. Noise Figure, IP3, and other specifications are designed for basestations. The IC is manufactured on an advanced high frequency Si Ge process, and is packaged in a standard miniature 8-lead plastic MSOP package. 6° MAX 0° MIN 0.192 + 0.008 0.012 0.006 + 0.003 -A- 0.118 + 0.004 sq. NOTES: 1. Shaded lead is pin 1. 2. All dimensions are exclusive of flash, protrusions or burrs. 3. Lead coplanarity: 0.002 with respect to datum "A". 0.021 + 0.004 0.006 + 0.002 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT Package Style: MSOP-8 9Si Ge HBT Ga As HBT Ga N HEMT Ga As MESFET Si CMOS Si Ge Bi-CMOS Features - Supports Basestation Applications - -55d B to +51d B Gain Control Range @ 85MHz - Single 3V Power Supply - -2d Bm Input IP3 - 12MHz to 385MHz Operation IN+ 1 IN- 2 GND 3 GC 4 GAIN CONTROL 8 VCC1 7 VCC2 6 OUT+ Ordering Information 5 OUTRF2637 RF2637 PCBA Receive AGC Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://.rfmd. Rev A5 050829 10-41 Absolute Maximum Ratings Parameter Supply Voltage Control Voltage Input RF Power Operating Ambient Temperature Storage Temperature Value -0.5 to +5.0 -0.5 to +5.0 +10 -40 to +85 -40 to +150 Unit VDC VDC d Bm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. Ro HS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ....