RF3158 Datasheet | RF Micro Devices

Features Linear EDGE and GSM Operation Power Star® GSM/GPRS Power Control Digital Band Select Enables a Single PA Lineup Single Supply Voltage; Requires no External Reference Voltage Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Low Power Mode for Reduced EDGE Current Analog Bias Control allows External Optimization of EDGE Current pact 6mmx6mm Package Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Lineups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 patible Products Mobile EDGE/GPRS Data Products BAND SEL 2 TX EN 3 VBATT 4 VMODE 5 VRAMP 6 LB RFIN 7 12 LB RFOUT Integrated Power Control - - - - - Functional Block Diagram - Product Description The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50 Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (Ga As HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 6mmx6mm laminate module with a protective plastic overmold. Ordering Information RF3158 Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board - Applications - - - - - - RF3158PCBA-41X 9Ga As HBT Ga As MESFET In Ga P HBT Optimum Technology Matching® Applied Si Ge Bi CMOS Si Bi CMOS Si Ge HBT 9Si CMOS Si BJT Ga As p HEMT Ga N HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™...