RF3159 Datasheet | RF Micro Devices

Features - - - - VBIAS - - - - - High Gain for use in Systems with Low RF Driver Power Linear EDGE and GSM Operation Power Star® GSM/GPRS Power Control Digital Band Select Enables GSM850, EGSM900 or DCS, PCS Amplifier Lineup Single Supply Voltage; Requires no External Reference Voltage Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Low Power Mode for Reduced EDGE Current Digital Bias Control for Simple Implementation of Low Power Mode pact 6mmx6mm Package Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Lineups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 patible Products Mobile EDGE/GPRS Data Products TX EN 3 Integrated Power Control VBATT 4 VMODE 5 VRAMP 6 LB RFIN 7 8 12 LB RFOUT Functional Block Diagram Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50 Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (Ga As HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 6mmx6mm laminate module with a protective plastic overmold. Ordering Information RF3159Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Applications - - - RF3159 - RF3159PCBA-41X Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board - - 9Ga As HBT Ga As MESFET In Ga P HBT Optimum Technology Matching® Applied Si Ge Bi CMOS Si Bi CMOS Si Ge...