RF3159 Overview
The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50 Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling.
RF3159 Key Features
- High Gain for use in Systems with Low RF Driver Power Linear EDGE and GSM Operation PowerStar® GSM/GPRS Power Control Di