RF3220
RF3220 is HIGH LINEARITY/DRIVER AMPLIFIER manufactured by RF Micro Devices.
Description
The RF3220 is a high-efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range. The RF3220 operates from a single 5V power supply, and is assembled in an economical 3mmx3mm QFN package.
-A2 PLCS 0.10 C A
HIGH LINEARITY/DRIVER AMPLIFIER
- GSM/EDGE Systems
- Final PA for Low-Power Applications
2 PLCS 0.05 C
0.10 C B 2 PLCS
0.70 0.65
0.90 0.85 0.05 0.00
3.00 12° MAX
2 PLCS 0.10 C B
2.75 SQ.
0.10 C A 2 PLCS
-B-
Dimensions in mm.
-C-
SEATING PLANE
Shaded lead is pin 1.
0.10 M C A B
0.60 0.24 TYP
0.30 0.18 PIN 1 ID R.20
0.75 0.50
1.25 0.95 SQ. 0.50
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS In Ga P/HBT
Package Style: QFN, 12-Pin, 3x3
Ga As HBT Si Ge HBT Ga N HEMT
Ga As MESFET Si CMOS Si Ge Bi-CMOS
Features
- 500MHz to 2GHz
- +40.8d Bm Output IP3
- +14.2d B Gain at 1850MHz
BIAS
- +12.4d Bm Input P1d B at 1850MHz
- 2.8d B Noise Figure at...
