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RF3220 - HIGH LINEARITY/DRIVER AMPLIFIER

General Description

The RF3220 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package.

This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range.

Key Features

  • 500MHz to 2GHz.
  • +40.8dBm Output IP3.
  • +14.2dB Gain at 1850MHz BIAS GND GND.
  • +12.4dBm Input P1dB at 1850MHz.
  • 2.8dB Noise Figure at 1850MHz 9 GND 8 RF OUT 7 GND 12 GND 1 RF IN 2 GND 3 4 GND 11 10.
  • Single 5V Power Supply 5 GND 6 GND Ordering Information RF3220 High Linearity/Driver Amplifier RF3220PCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RF3220 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Cellular and PCS Systems • CDMA, W-CDMA Systems Product Description The RF3220 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range. The RF3220 operates from a single 5V power supply, and is assembled in an economical 3mmx3mm QFN package. -A2 PLCS 0.10 C A HIGH LINEARITY/DRIVER AMPLIFIER • GSM/EDGE Systems • Final PA for Low-Power Applications 2 PLCS 0.05 C 3.00 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 3.00 12° MAX 2 PLCS 0.10 C B 2.75 SQ. 0.