RF Micro Devices RF3220
The RF3220 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range. The RF3220 operates from a single 5V power supply, and is assembled in an economical 3mmx3mm QFN package.| Part No. | RF3220 |
|---|---|
| Datasheet | RF3220 Download |
| Manufacturer |  RF Micro Devices |
| Description | HIGH LINEARITY/DRIVER AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● BasestationAPPLICATIONS
● Cellular and PCS Systems● CDMA, W-CDMA Systems Product
DESCRIPTION
-A2 PLCS 0.10 C A HIGH LINEARITY/DRIVER AMPLIFIER● GSM/EDGE Systems
● Final PA for Low-Power
APPLICATIONS
2 PLCS 0.05 C 3.00 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 3.00 12° MAX 2 PLCS 0.10 C B 2.75 SQ. 0.10 C A 2 PLCS -B- Dimensions in mm. -C- SEATING PLANE Shaded lead is pin 1. 0.10 M C A B 0.60 0.24 TYP 0.30 0.18 PIN 1 ID R.20 0.75 0.50 1.25 0.95 SQ. 0.50 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 12-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOSFEATURES
● 500MHz to 2GHz● +40.8dBm Output IP3
● +14.2dB Gain at 1850MHz BIAS GND GND
● +12.4dBm Input P1dB at 1850MHz
● 2.8dB Noise Figure at 1850MHz 9 GND 8 RF OUT 7 GND 12 GND 1 RF IN 2 GND 3 4 GND 11 10
● Single 5V Power Supply 5 GND 6 GND Ordering Information RF3220 High Linearity/Driver Amplifier RF3220PCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc.
