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RF3223 - HIGH LINEARITY/DRIVER AMPLIFIER

General Description

The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package.

This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range.

Key Features

  • 500MHz to 2000MHz.
  • +44.0dBm Output IP3.
  • +14.0dB Gain at 850MHz BIAS GND GND.
  • +11.4dBm Input P1dB at 850MHz.
  • 3.4dB Noise Figure at 850MHz 9 GND 8 RF OUT 7 GND 12 GND 1 RF IN 2 GND 3 4 GND 11 10.
  • Single 5V Power Supply Ordering Information RF3223 RF3223PCBA-41X High Linearity/Driver Amplifier Fully Assembled Evaluation Board 5 GND 6 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RF3223 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Cellular and PCS Systems • CDMA, W-CDMA Systems Product Description The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500MHz to 3GHz frequency range. The RF3223 operates from a single 5V power supply, and is assembled in an economical 3mmx3mm QFN package. -A2 PLCS 0.10 C A HIGH LINEARITY/DRIVER AMPLIFIER • GSM/EDGE Systems • Final PA for Low-Power Applications 2 PLCS 0.05 C 3.00 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 3.00 12° MAX 2 PLCS 0.10 C B 2.75 SQ. 0.