RF3266 Datasheet | RF Micro Devices

Features - 16 RF IN 1 Interstage MN 13 12 VCC2 - - - - VDET Applications - - Functional Block Diagram - - 3V W-CDMA Handsets Multi-Mode W-CDMA 3G Handsets Spread-Spectrum Systems PCMCIA Cards Product Description The RF3266 is a high-power, high-efficiency, linear PA module designed for use as the final RF amplifier in 3V, 50 Ω W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1920MHz to 1980MHz band. The RF3266 has a digital control pin which, when enabled, will allow the amplifier to operate up to 19d Bm output power with reduced current consumption. In the Low Power Mode, the current consumption may be reduced by more than 50% that of a standard power amplifier. The RF3266 is fully HSDPA-capable and is assembled in a 16-pin, 3mmx3mm, QFN package. Ordering Information RF3266 RF3266PCBA-410 3V W-CDMA Linear PA Module Fully Assembled Evaluation Board 9Ga As HBT Ga As MESFET In Ga P HBT Optimum Technology Matching® Applied Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 - For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.. - +28d Bm Linear Output Power, ULRMC12.2 (26.5d Bm, HSDPA) +28d B Linear Gain at +28d Bm Digital Controlled HPM/LPM HSDPA Capable Low Quiescent Current (LPM <20m A) 21% Linear Efficiency@19d Bm (LPM) Q1 NC 2 VCC2L Q2 11 VCC2 VMODE 3 Bias OMN Integrated Power Detector 10 VCC2 VREG 4 5 9 RF OUT...