RF3394 Datasheet | RF Micro Devices

Description The RF3394 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data munication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. The device is designed for cost effective high reliability in a plastic package. The 3mmx3mm footprint is patible with standard ceramic and plastic Micro-X packages. 2 PLCS 0.10 C A GENERAL PURPOSE AMPLIFIER - Driver Stage for Power Amplifiers - Final PA for Low-Power Applications - High Reliability Applications 0.05 C -A3 2 PLCS 0.10 C B 0.20 REF. 0.90 0.85 0.05 0.00 0.10 C B 2 PLCS 12° MAX SEATING PLANE 0.10 C A 2 PLCS 2.75 SQ -B- Dimensions in mm. -C- Shaded lead is pin 1. 0.10 M C A B 0.60 0.24 TYP 0.35 0.30 PIN 1 ID R0.20 1.90 1.60 0.45 0.35 0.375 0.275 1.15 0.85 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT Package Style: QFN, 12-Pin, 3x3 Ga As HBT Si Ge HBT Ga N HEMT Ga As MESFET Si CMOS Si Ge Bi-CMOS Features - DC to >6000MHz Operation - Internally Matched Input and Output - 20d B Small Signal...