RF Micro Devices RF3395
The RF3395 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified.APPLICATIONS
● BasestationAPPLICATIONS
● Broadband, Low-Noise Gain Blocks● IF or RF Buffer Amplifiers Product
DESCRIPTION
APPLICATIONS
include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is designed for cost effective high reliability in a plastic package. The 3mmx3mm footprint is compatible with standard ceramic and plastic Micro-X packages. 2 PLCS 0.10 C A GENERAL PURPOSE AMPLIFIER● Driver Stage for Power Amplifiers
● Final PA for Low-Power
APPLICATIONS
● High ReliabilityAPPLICATIONS
0.05 C -A3 1 3.00 2 PLCS 0.10 C B 0.20 REF. 0.90 0.85 0.05 0.00 3.00 0.10 C B 2 PLCS 12° MAX SEATING PLANE 0.10 C A 2 PLCS 2.75 SQ -B- Dimensions in mm. -C- Shaded lead is pin 1. 0.10 M C A B 0.60 0.24 TYP 0.35 0.30 PIN 1 ID R0.20 1.90 1.60 0.45 0.35 0.375 0.275 1.15 0.85 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 12-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si C...