Datasheet4U Logo Datasheet4U.com

RF3397 - GENERAL PURPOSE AMPLIFIER

General Description

The RF3397 is a general purpose, low-cost RF amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block.

Key Features

  • DC to >6000MHz Operation.
  • Internally Matched Input and Output.
  • 15.5dB Small Signal Gain GND GND GND.
  • +25.5dBm Output IP3.
  • +12.5dBm Output P1dB 9 NC 12 NC 1 RF IN 2 NC 3 4 GND 11 10.
  • Footprint Compatible with Micro-X 8 RF OUT 7 NC 5 GND 6 GND Ordering Information RF3397 General Purpose Amplifier RF3397PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409,.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RF3397 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers Product Description The RF3397 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. The device is designed for cost effective high reliability in a plastic package.