RF5184 Datasheet | RF Micro Devices

Description -A-B- The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation Ga As HBT process, and was designed for use as the final RF amplifier in W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band (Band 5) and 1850MHz to 1910MHz band (Band 2). The RF5184 has a digital control line for low power applications to lower quiescent current. The RF5184 is assembled in a 24-pin, 4mmx4mm, QFN package. 1.00 0.80 0.10 C 0.10 C B 2 PL 0.10 C A 2 PL 0.2 C Shaded area indicates pin 1. Dimensions in mm. -C- 0.50 TYP 0.10 C A B 0.55 TYP 0.35 SEATING PLANE Scale: None 0.10 C 2.60 2 PL 2.40 0.05 TYP 0.00 0.203 TYP 0.08 C 0.30 TYP 0.18 0.10 M C A B 0.08 0.03 0.50 TYP 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT VMODE PCS Package Style: QFN, 24-Pin, 4x4 Ga As HBT Si Ge HBT Ga N HEMT VCC1 PCS VCC2 PCS VCC2 PCS Ga As MESFET Si CMOS Si Ge Bi-CMOS VCC2 PCS Features - Input/Output Internally Matched@50 Ω - 43% Peak Linear Efficiency for Cell Band - -41d Bc ACLR @ 5MHz for Cell Band 24 VREG - PCS 1 RF IN - PCS 2 VREG - CELL 3...