RF Micro Devices RF5189
The RF5189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 12-pin QFN package with a backside ground.- Min Voltage : 3V
- Max Voltage : 5V
- Max Operating Temp : 85°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | RF5189 |
|---|---|
| Datasheet | RF5189 Download |
| Manufacturer |  RF Micro Devices |
| Description | 3V / 2.45GHz LINEAR POWER AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● IEEE802.11B WLANAPPLICATIONS
● 2.5GHz ISM BandAPPLICATIONS
● Wireless LAN Systems ProductDESCRIPTION
0.10 C -A- 3V, 2.45GHz LINEAR POWER AMPLIFIER● Commercial and Consumer Systems
● Portable Battery-Powered Equipment
● Spread-Spectrum and MMDS Systems 0.10 C 0.08 C The RF5189 is designed to maintain linearity over a wide range of supply voltage and power output. The RF5189 is designed to reduce end-product BOM count by integrating all matching circuitry onto the chip. INDEX AREA 3.00 2 PLCS 1.00 0.80 0.10 C 0.05 0.00 2 PLCS 3.00 Dimensions in mm. -B- Shaded lead is pin 1. 0.20 REF SEATING PLANE +0.10 -0.15 0.50 0.435 SQ -C- 1.45 0.18 TYP 0.50 0.30 TYP 1.45 0.30 0.18 0.10 M C A B +0.10 -0.15 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 12-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
FEATURES
● Single Power Supply 3.0V to 5.0V● +30dBm Saturated Output Power
● 25dB Small Signal Gain
● High Linearity VCC2...
